METAL-DIELECTRIC-SEMICONDUCTOR TRANSISTORS IN INTEGRAL CIRCUITS

Induced n-type channel MDY-transistors are widely used in the development of microcircuits. Induced nand p-type channel transistors are mainly used in complementary MDY-microcircuits. Of the n- and p-type channel transistors with the same structure, the n-type channel transistor has a higher frequency and larger curvature characteristic than the p-type channel transistor, making it superior to the p-type channel transistor. This advantage is explained by the fact that the mobility of electrons in the crystal is greater than that of holes. MDY-transistors differ from bipolar transistors in many ways. They can be created on a thin layer of silicon deposited on a dielectric substrate or on an oxidized silicon substrate. Microcircuits based on MDY-transistors have a high degree of integration, radiation resistance, and high-frequency operation.