EFFECT OF H+ İONS ON THE LUMİNESCENT PROPERTİES OF GASE SİNGLE CRYSTAL

The excitation and photoluminescence (PL) spectra of a GaSe single crystal irradiated with H+ ions with an energy of 70 keV were studied in the temperature range of 20÷300 K. It was found that the energetic state of the maximum observed at a wavelength of ~622 nm in the PL spectra does not depend on the excitation energy and radiation dose. Since point defects (Frenkel pairs) formed in the crystal lattice as a result of the action of H+ ions (1·1015-5·1015 cm-3) partially compensate for structural defects, the intensity of PL radiation I increases ~5 times. The increase in the intensity of the PL - band at low radiation doses is a result of recombination radiation occurring as a result of the interaction of acceptor and donor-type point defects formed in the crystal lattice.