THE INFLUENCE OF THE ERBIUM ATOM ON THE OPTICAL PROPERTIES OF EPITASIAL SILICON FILMS

The results of growing erbium-doped epitaxial silicon layers using two different growth modes: conventional molecular beam epitaxy (MBE) and solid-phase epitaxy (SPE) are presented. It has been shown that an erbium-doped silicon layer, when deposited by SPE onto a cold substrate and subsequent annealing, exhibits more intense photoluminescence at a wavelength of 1.54 µm than layers grown by MBE.

Publication Details

Journal
Zenodo (CERN European Organization for Nuclear Research)
Published
2024-12-15
DOI
https://doi.org/10.5281/zenodo.14491942
Primary Topic
Proteins in Food Systems
Type
article
Field-Weighted Citation Impact
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article

THE INFLUENCE OF THE ERBIUM ATOM ON THE OPTICAL PROPERTIES OF EPITASIAL SILICON FILMS

Zenodo (CERN European Organization for Nuclear Research)
Proteins in Food Systems
article

THE INFLUENCE OF THE ERBIUM ATOM ON THE OPTICAL PROPERTIES OF EPITASIAL SILICON FILMS

article en

Abstract

The results of growing erbium-doped epitaxial silicon layers using two different growth modes: conventional molecular beam epitaxy (MBE) and solid-phase epitaxy (SPE) are presented. It has been shown that an erbium-doped silicon layer, when deposited by SPE onto a cold substrate and subsequent annealing, exhibits more intense photoluminescence at a wavelength of 1.54 µm than layers grown by MBE.

Zenodo (CERN European Organization for Nuclear Research)
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Proteins in Food Systems
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THE INFLUENCE OF THE ERBIUM ATOM ON THE OPTICAL PROPERTIES OF EPITASIAL SILICON FILMS · Zenodo (CERN European Organization for Nuclear Research) (2024) | TGRS Research Map | TGRS