THE INFLUENCE OF THE ERBIUM ATOM ON THE OPTICAL PROPERTIES OF EPITASIAL SILICON FILMS
The results of growing erbium-doped epitaxial silicon layers using two different growth modes: conventional molecular beam epitaxy (MBE) and solid-phase epitaxy (SPE) are presented. It has been shown that an erbium-doped silicon layer, when deposited by SPE onto a cold substrate and subsequent annealing, exhibits more intense photoluminescence at a wavelength of 1.54 µm than layers grown by MBE.
Publication Details
- Journal
- Zenodo (CERN European Organization for Nuclear Research)
- Published
- 2024-12-15
- DOI
- https://doi.org/10.5281/zenodo.14491942
- Primary Topic
- Proteins in Food Systems
- Type
- article
- Field-Weighted Citation Impact
- 0.00