MAGNETORESISTANCE OF GdxSn1-xSe SYSTEM ALLOYS

The dependence of magnetic resistance of GdxSn1-xSe solid solutions on gadolinium content, temperature and magnetic field strength is investigated. It is established that with an increase in the amount of Gd element in the composition, the absolute value of magnetic resistance increases, the inversion point in SnSe solid solutions with Gd element shifts to the region of higher temperature. The change in the sign of magnetic resistance is due to a change in the scattering mechanism due to the participation of second-order charge carriers in the charge transfer process.

Publication Details

Journal
Zenodo (CERN European Organization for Nuclear Research)
Published
2024-10-13
DOI
https://doi.org/10.5281/zenodo.13926558
Primary Topic
VLSI and FPGA Design Techniques
Type
article
Field-Weighted Citation Impact
0.00
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article

MAGNETORESISTANCE OF GdxSn1-xSe SYSTEM ALLOYS

Zenodo (CERN European Organization for Nuclear Research)
VLSI and FPGA Design Techniques
article

MAGNETORESISTANCE OF GdxSn1-xSe SYSTEM ALLOYS

article en

Abstract

The dependence of magnetic resistance of GdxSn1-xSe solid solutions on gadolinium content, temperature and magnetic field strength is investigated. It is established that with an increase in the amount of Gd element in the composition, the absolute value of magnetic resistance increases, the inversion point in SnSe solid solutions with Gd element shifts to the region of higher temperature. The change in the sign of magnetic resistance is due to a change in the scattering mechanism due to the participation of second-order charge carriers in the charge transfer process.

Zenodo (CERN European Organization for Nuclear Research)
Openalex Percentile: Top 67%
VLSI and FPGA Design Techniques
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MAGNETORESISTANCE OF GdxSn1-xSe SYSTEM ALLOYS · Zenodo (CERN European Organization for Nuclear Research) (2024) | TGRS Research Map | TGRS