Efficiency and Cost Comparison of GaN/Si and SiC/Si Hybrid ANPC Three-phase Inverter

This paper evaluates the benefits of a hybrid Active Neutral Point Clamped (ANPC) topology that combines Wide Band Gap (WBG) materials, Gallium Nitride (GaN) or Silicon Carbide (SiC), with Silicon (Si) technologies. The proposed topology enables the integration of GaN semiconductors, typically rated up to 650 V, into 800 V bus applications— an input voltage that the automotive market tends to reach. Using hybridization of semiconductor technologies, the system achieves substantial cost reduction without compromising efficiency. The concept is experimentally validated using a 15 kW threephase prototype.