Fabrication of silicon W and G center embedded light-emitting diodes for electroluminescence

The need for reliable quantum light sources drives our research to study color centers (CCs) in silicon as telecommunication O-band emitters. Building from photoluminescence measurements, we compare new electroluminescence measurements. To this end, we synthesized CC-embedded p-i-n junctions in silicon, creating CC light-emitting diode devices. The two types of CCs synthesized were G-centers and W-centers, which show zero-phonon lines at approximately 1279 nm and 1218 nm, respectively. Here, we present our device design, fabrication process flow, and report on the device performance results from measurements to date.