High DimensionlessFigure of Merit and EfficiencyThermoelectrics for Operation below Sub-250 °COriginof Colossal Seebeck Coefficient with Phonon Assisting, Coexistencewith Electrical Conductivity, and Device Application for Their MultilayeredStructure

Thermoelectric (TE) devices recycle high-temperature waste-heat efficiently, but waste-heat below sub-250 °C remains uncaptured. As promoting full autonomy for the Internet of Things (IoT), we present a TE generator using multilayered pseudo-<i>p</i>-type GaN/TiN/GaN and <i>n</i>-type TiO<sub>2</sub>/TiN/TiO<sub>2</sub> TE one-leg devices, where heterozygous of outer/inner layers demonstrates the functions of a colossal Seebeck coefficient (<i>S</i> = +15,000 μV K<sup>–1</sup>) with phonon-assist hopping, controlling by the porosity for reducing thermal conductivity (κ), a high electric conductivity (σ) with reducing κ by outer layers, and σ–<i>S</i> coexistence over singular curve by the asymmetric electrode configuration. <i>S</i> is elucidated hopping among inner grains and the space charge (SC) grain boundary (GB) of 100 μm regions within Debye length. By assisting phonon, SC capturing, hopping-up (recoiling, pseudo-<i>p</i>-type) or -down (<i>n</i>-type) over potential barriers at GBs are investigated. The devices showed high <i>ZT</i> (∼2.2), low κ (15.2 W m<sup>–1</sup> K<sup>–1</sup>), and outputs at sub-250 °C, which is promising for waste heat recycling (predicted efficiency: 12.5%).

Publication Details

Journal
Figshare
Published
2025-01-28
DOI
https://doi.org/10.1021/acsami.4c19044.s001
Primary Topic
Advanced Thermoelectric Materials and Devices
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article
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article

High DimensionlessFigure of Merit and EfficiencyThermoelectrics for Operation below Sub-250 °COriginof Colossal Seebeck Coefficient with Phonon Assisting, Coexistencewith Electrical Conductivity, and Device Application for Their MultilayeredStructure

Figshare
Advanced Thermoelectric Materials and Devices
article

High DimensionlessFigure of Merit and EfficiencyThermoelectrics for Operation below Sub-250 °COriginof Colossal Seebeck Coefficient with Phonon Assisting, Coexistencewith Electrical Conductivity, and Device Application for Their MultilayeredStructure

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Abstract

Thermoelectric (TE) devices recycle high-temperature waste-heat efficiently, but waste-heat below sub-250 °C remains uncaptured. As promoting full autonomy for the Internet of Things (IoT), we present a TE generator using multilayered pseudo-<i>p</i>-type GaN/TiN/GaN and <i>n</i>-type TiO<sub>2</sub>/TiN/TiO<sub>2</sub> TE one-leg devices, where heterozygous of outer/inner layers demonstrates the functions of a colossal Seebeck coefficient (<i>S</i> = +15,000 μV K<sup>–1</sup>) with phonon-assist hopping, controlling by the porosity for reducing thermal conductivity (κ), a high electric conductivity (σ) with reducing κ by outer layers, and σ–<i>S</i> coexistence over singular curve by the asymmetric electrode configuration. <i>S</i> is elucidated hopping among inner grains and the space charge (SC) grain boundary (GB) of 100 μm regions within Debye length. By assisting phonon, SC capturing, hopping-up (recoiling, pseudo-<i>p</i>-type) or -down (<i>n</i>-type) over potential barriers at GBs are investigated. The devices showed high <i>ZT</i> (∼2.2), low κ (15.2 W m<sup>–1</sup> K<sup>–1</sup>), and outputs at sub-250 °C, which is promising for waste heat recycling (predicted efficiency: 12.5%).

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Advanced Thermoelectric Materials and Devices
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