On the Einstein-de Haas effect in van der Waals microelectromechanical systems

\n\nThe electric-field–induced gyromagnetic effect in antiferromagnetic 2D films, analogous to the classical Einstein-de Haas effect in ferromagnetic materials, is considered. It is shown that for the micrometer-sized flakes of antiferromagnetic van der Waals materials having a non-diagonal tensor of the magnetoelectric effect, the magnitude of the electrically induced Einstein-de Haas effect is sufficient to be detected with the conventional optical lever approach of an atomic force microscope.\n