Stability and Reliabilityof van der Waals High‑κSrTiO₃ Field-Effect Transistors with Small Hysteresis

Single-crystal SrTiO₃ (STO) is an ultrahigh-κ insulator with an expected low interface trap density that promises high breakdown strength and has great potential to boost the reliability of two-dimensional (2D) field-effect transistors (FETs). Here we provide a detailed study of the performance, stability, and reliability of MoS₂ FETs with STO gate insulators. Most importantly, we observe a small hysteresis for electric fields up to 8 MV cm^–1 at a sweep rate range spanning 0.01–1 V s^–1 and sweep times of kiloseconds. Interestingly, the hysteresis is counterclockwise and bias temperature instability (BTI) is often anomalous, both likely caused by the diffusion of oxygen vacancies. We also show that the hysteresis dynamics in MoS₂/STO FETs are reproducible over a long time, which underlines their high reliability. Our findings show that STO is a promising gate insulator that might help overcome critical obstacles to highly reliable 2D nanoelectronics.