In-Pixel Dual-BandIntercorrelated Compressive SensingBased on MoS₂/h-BN/PdSe₂ Vertical Heterostructure

Infrared-visible fused photodetection presents significant potential for target perception in complex scenarios. However, dual-band imaging inherently generates a considerable amount of redundant data, highlighting a pressing need to perform compressive sensing directly at the pixel level. Here, we report a photodetector composed of a MoS₂/h-BN/PdSe₂ vertically stacked heterostructure with a common metal electrode interconnecting the bottom PdSe₂ channel with the top MoS₂ channel. By exploiting the property that infrared light can penetrate deeper than visible light, the bottom PdSe₂/Au photovoltaic Schottky junction in this photodetector can detect the infrared light and drive the top MoS₂ channel able to detect the visible light. Moreover, by applying voltage at the external drain terminal, the output photocurrent can be further enhanced or suppressed depending on the voltage polarity. The detector receives dual-band optical inputs but outputs only a single electrical signal, allowing for in-pixel dual-band intercorrelated compressive sensing. The physical process of infrared photoresponse that drives the visible photoresponse occurs directly within the detector, enabling the filtration and extraction of targets of interest based on the intensity of infrared irradiation at the pixel level. This work offers a compact and energy-efficient solution for multispectral optical information compressive sensing and processing in complex environments.