Stacking-DependentCorrelated Gap and Kondo Peak inthe Heterophase Bilayer with Picometer-Level Interlayer Shift

Two-dimensional heterojunctions provide a versatile platform for exploring various quantum properties. Here, we create bilayer 1T/2H-NbSe₂ heterophase junctions and realize two types of stacking configurations with picometer-level lattice shifts. By high-resolution scanning tunneling microscopy/spectroscopy, we found that the electronic states are highly dependent on the stacking configurations of the 1T layer on the 2H one. Unexpectedly, a tiny shift between the two configurations (about 110 pm in the lateral direction and 30 pm in the vertical one) leads to a change from a correlated gap lattice into a Kondo peak lattice. Moreover, both of them show a spin-related pseudogap width of 2–3 meV close to the Fermi level, which splits under the external magnetic field. Our study demonstrates the important role of delicate stacking configurations on the many-body physics and spin-related phenomena in the heterophase junctions.