Border Trap-Enhanced\nGa<sub>2</sub>O<sub>3</sub> Nonvolatile\nOptoelectronic Memory

Nonvolatile\ndeep ultraviolet optoelectronic memory (DUVOEM)\nholds\nimmense potential in cyberphysical systems, offering high storage\ndensity, swift conversion speeds, and robust data security. However,\nthe current data retention time, typically limited to milliseconds\nor hours, mostly underperforms the expectations of years as a nonvolatile\nmemory. In this work, we present a β-Ga<sub>2</sub>O<sub>3</sub>/SiO<sub>2</sub>/Si thin-film transistor DUVOEM with an enhanced\ndata storage capability via trapping and releasing of photogenerated\nholes in border traps. Specifically, the photogenerated holes in β-Ga<sub>2</sub>O<sub>3</sub> will tunnel through SiO<sub>2</sub> and be\ncaptured by these defects. Innovatively, the much slower holes’\nrelease process from the border traps has been harnessed in developing\noutstanding nonvolatile optoelectronic memories. Rapid writing and\nerasing speeds, long-time retention (≥10 years), and high robustness\ndemonstrate its practical application values. This study not only\nprovides a novel strategy for nonvolatile DUVOEM but also provides\nan instance of functionalizing β-Ga<sub>2</sub>O<sub>3</sub> memory with common defects in Si technology.