High Performance\nSolar-Blind UV Detectors Based on\nN‑Type Wide Bandgap Organic Materials

A strategy based on N-type organic wide-bandgap materials\nto form\nheterojunctions enhances carrier separation and achieves high-performance\nUV detection. This approach addresses issues such as low UV detection\nperformance and insufficient depth of detection wavelengths. In our\nstudy, we combined two N-type semiconductor materials with a p-type\nsmall molecule to form a heterojunction serving as the photosensitive\nlayer. This configuration successfully achieved a high-performance\nsolar-blind ultraviolet (SBUV) detector, exhibiting a maximum responsivity\n(<i>R</i>) of 227 A/W, an EQE of 1.1 × 10<sup>5</sup>%, and a peak detectivity of 3.3 × 10<sup>11</sup> Jones under\n260 nm illumination with an intensity of 50 μW/cm<sup>2</sup>. Furthermore, by employing Al<sub>2</sub>O<sub>3</sub> with a high\ndielectric constant as the gate dielectric, we developed a detector\noperable with a low drive voltage of 1.8 V. This provides a valuable\nresearch paradigm for future organic ultraviolet detection endeavors.