Optimization of CrystalGrowth and Defect Passivationof FASnI<sub>3</sub> Film by Using 2‑Pyridylthiourea for Sn-BasedPerovskite Solar Cells

Currently, tin (Sn) is the most efficient alternative to lead (Pb) for perovskite solar cells (PSCs). However, the fabrication of pinhole-free uniform and highly crystalline Sn-perovskite typically, FASnI<sub>3</sub> films remains a crucial factor due to their rapid crystallization. To address this issue, we incorporated 2-pyridylthiourea (2PTU) into the precursor solution during FASnI<sub>3</sub> film fabrication. Based on the morphology, structure, and elements analysis, we have observed that 2PTU impacts the growth of perovskite crystals and surface morphology by coordinating with SnI<sub>6</sub> <sup>4–</sup> octahedral. Moreover, the 2PTU-added FASnI<sub>3</sub> film contained fewer defects and a prolonged carrier lifetime. These substantial improvements in the FASnI<sub>3</sub> film resulted in an enhanced open-circuit voltage, elevating the power conversion efficiency of Sn-PSC from 10.23% (pristine) to 12.85% (2PTU). Significantly, after 500 h of continuous illumination at maximum power point tracking under one sun, the 2PTU-added FASnI<sub>3</sub>-based PSCs showed remarkable stability and maintained above 90% of their initial PCE.

Publication Details

Journal
Figshare
Published
2025-02-13
DOI
https://doi.org/10.1021/acsaem.4c02534.s001
Primary Topic
Perovskite Materials and Applications
Type
article
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article

Optimization of CrystalGrowth and Defect Passivationof FASnI3 Film by Using 2‑Pyridylthiourea for Sn-BasedPerovskite Solar Cells

Figshare
Perovskite Materials and Applications
article

Optimization of CrystalGrowth and Defect Passivationof FASnI3 Film by Using 2‑Pyridylthiourea for Sn-BasedPerovskite Solar Cells

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Abstract

Currently, tin (Sn) is the most efficient alternative to lead (Pb) for perovskite solar cells (PSCs). However, the fabrication of pinhole-free uniform and highly crystalline Sn-perovskite typically, FASnI<sub>3</sub> films remains a crucial factor due to their rapid crystallization. To address this issue, we incorporated 2-pyridylthiourea (2PTU) into the precursor solution during FASnI<sub>3</sub> film fabrication. Based on the morphology, structure, and elements analysis, we have observed that 2PTU impacts the growth of perovskite crystals and surface morphology by coordinating with SnI<sub>6</sub> <sup>4–</sup> octahedral. Moreover, the 2PTU-added FASnI<sub>3</sub> film contained fewer defects and a prolonged carrier lifetime. These substantial improvements in the FASnI<sub>3</sub> film resulted in an enhanced open-circuit voltage, elevating the power conversion efficiency of Sn-PSC from 10.23% (pristine) to 12.85% (2PTU). Significantly, after 500 h of continuous illumination at maximum power point tracking under one sun, the 2PTU-added FASnI<sub>3</sub>-based PSCs showed remarkable stability and maintained above 90% of their initial PCE.

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