High Frequency and\nHigh Gain Split-Gate Monolayer\nMoS<sub>2</sub> Field Effect Transistor for Common Source Amplifier\nCircuit

For analog systems, the field effect transistor (FET)\nis regarded\nas one of the fundamental electronic devices. However, its small gain\nrestricts the application of FET in amplifiers and analog circuits.\nHere, we design a split-gate FET based on monolayer MoS<sub>2</sub> and optimize the key performance index of intrinsic gain (<i>A</i><sub>v0</sub>), transconductance frequency product (TFP),\nand gain frequency product (GFP). The maximum <i>A</i><sub>v0</sub> of 293 V/V and cutoff frequency of hundreds of GHz are obtained\nby optimizing the control gate positions and input gate voltage. With\nan equivalent oxide thickness of 0.3 nm, the FET possesses a superior\nTFP of 7657 GHz/V and GFP of 14148 GHz. In particular, a common source\namplifier circuit utilizing the split-gate FET is established, achieving\nthe largest circuit gain of approximately 277 V/V. This work provides\na promising route to use split-gate FET to realize a common source\namplifier circuit with high circuit gain.