Ultrafast andHighly Mobile Photocarriers in MonolayerWSe<sub>2</sub> Doped by α‑RuCl<sub>3</sub>

We report an experimental investigation of photocarrier dynamics in a heterostructure formed by a WSe<sub>2</sub> monolayer stacked on a multilayer α-RuCl<sub>3</sub> flake. The samples were fabricated using mechanical exfoliation and dry transfer techniques. Photoluminescence measurements showed that the excitonic photoluminescence of WSe<sub>2</sub> is quenched by more than 3 orders of magnitude upon contact with α-RuCl<sub>3</sub>. Transient absorption measurements revealed an ultrashort photocarrier lifetime of 0.5 ps in the heterostructure. Spatially resolved transient absorption microscopy measurements were employed to probe the transport properties of these photocarriers, resulting in a room-temperature diffusion coefficient of 370 cm<sup>2</sup> s<sup>–1</sup>, which is higher than the exciton diffusion coefficients of most previously studied 2D semiconductors. These results suggest that α-RuCl<sub>3</sub>-doped WSe<sub>2</sub> could be utilized in high-speed optoelectronic devices.

Publication Details

Journal
Figshare
Published
2025-02-27
DOI
https://doi.org/10.1021/acs.nanolett.5c00369.s001
Primary Topic
2D Materials and Applications
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article
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article

Ultrafast andHighly Mobile Photocarriers in MonolayerWSe2 Doped by α‑RuCl3

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2D Materials and Applications
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Ultrafast andHighly Mobile Photocarriers in MonolayerWSe2 Doped by α‑RuCl3

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Abstract

We report an experimental investigation of photocarrier dynamics in a heterostructure formed by a WSe<sub>2</sub> monolayer stacked on a multilayer α-RuCl<sub>3</sub> flake. The samples were fabricated using mechanical exfoliation and dry transfer techniques. Photoluminescence measurements showed that the excitonic photoluminescence of WSe<sub>2</sub> is quenched by more than 3 orders of magnitude upon contact with α-RuCl<sub>3</sub>. Transient absorption measurements revealed an ultrashort photocarrier lifetime of 0.5 ps in the heterostructure. Spatially resolved transient absorption microscopy measurements were employed to probe the transport properties of these photocarriers, resulting in a room-temperature diffusion coefficient of 370 cm<sup>2</sup> s<sup>–1</sup>, which is higher than the exciton diffusion coefficients of most previously studied 2D semiconductors. These results suggest that α-RuCl<sub>3</sub>-doped WSe<sub>2</sub> could be utilized in high-speed optoelectronic devices.

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2D Materials and Applications
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