Research progress on Sb-rich nanostructured films for phase-change memory

\nIn the era of big data, the demand for data storage is increasing. Researchers are currently seeking to develop a non-volatile, high-speed, highly reliable, and low-energy storage medium. Phase change memory is a effective memory of them. This paper focuses on exploring different characteristics of thin films such as Ge2Sb2Te5, Sb2Te, Ge2Sb2Te5/ZnSb (GST/ZS) stacked thin films, Ru-doped Sb2Te, and MnTe/GeTe stacked thin films to analyze which stacked thin film for phase change memory can meet the requirements for high speed and thermal stability. Single-matter materials can improve stability to data and material loss by combining with Sb groups or stacking with their related materials to form new phase change materials. By controlling the temperature and resistance of Ge2Sb2Te5 film can have a better selection of optimization; Sb2Te film doped with C to get a higher improvement in the nature of the film, but the lack of stability; after stacking the two to better solve this problem.\n