Sb₂Se₃ Mutisegment HomostructuredNanowire Growth with a Catalyst-Free Incommensurate HeteroepitaxialMethod

One-dimensional multisegment nanostructures, with their unique physicochemical properties and broad application potential in optoelectronics, have garnered significant attention. However, current synthesis methods face challenges, including strict catalyst requirements, limited control over segment dimensions, and difficulties in achieving scalable and precise fabrication. These obstacles hinder the exploration of size-dependent physical properties and advanced applications. Here, we present a catalyst-free incommensurate heteroepitaxial growth method to synthesize Sb₂Se₃ multisegment homostructured nanowires. Using dashed-line-like nanowires synthesized in the first step as templates, our method achieves precise control over the segment number (three to nine) and diameter, forming homostructures with distinct physical properties. The Sb₂Se₃ nanowires grow along the [001] direction, and their anisotropic characteristics were confirmed by angle-resolved polarization Raman spectroscopy (ARPRS). The Sb₂Se₃ nanowires were applied in polarization-sensitive photodetectors, demonstrating a high dichroic ratio (∼1.7) and strong anisotropic photocurrent responses. This approach provides a versatile and scalable solution for fabricating multisegment nanostructures with tailored properties, paving the way for the further exploration of size-dependent phenomena and their integration into advanced anisotropic optoelectronic devices.