Influence of radiation defects on the photoelectric properties of polycrystalline CDTE films with deep impurity levels

\nIn this paper, the effect of boron implantation at doses of 9⋅1014 cm-2 on the deep-level spectra of polycrystalline CdTe films doped with silver is considered. It was found that boron implantation results in the formation of radiation defects in the region close to the surface of 0.2 μm. It was determined that the location of deep local levels, the activation energy of which is equal to Ec-1.15 eV, is located in the intercrystal barriers. The implanted CdTe: Ag layers are thermally treated for 30 min at a temperature of 100⁰C and the restoration of the barriers in these layers is shown: the interlayer grows and the concentration of levels participating in the photovoltage increases. Heating of non-implanted layers under the same conditions does not affect the shape of the primacy absorption spectra, but only increases its value in its own region by 1.4 times, i.e. heating improves the barriers only in the implanted layers.\n