Zn₂SiO₄ Nanotubes through theKirkendall Effect for Resistive Random-Access Memory Devices

Recent research on transition metal oxides has shifted the paradigm toward the development of diverse ternary phases in one-dimensional functional metal oxides. Among these, Zn-based ternary phases have been prominent, with Zn₂SiO₄ materials being a crucial material. This study focuses on one-dimensional ternary Zn₂SiO₄ nanotubes through a meticulous solid reaction synthesis and their resistive random-access memory (RRAM) application. The surface morphology and crystal structure of nanotubes have been systematically and meticulously investigated by scanning electron microscopy (SEM), X-ray diffraction (XRD), and transmission electron microscopy (TEM). This study elaborates on the successful synthesis of single-crystal Zn₂SiO₄ nanotubes after careful annealing at 900 °C for 3 h, which exhibit bipolar resistive switching behavior and simultaneously display resistive switching mechanisms involving electrochemical metallization (ECM) and valence change mechanism (VCM). This promising result suggests a potential breakthrough in the field of resistive memory devices, inspiring further research and development in this realm.