Observation of Moment-Dependent\nand Field-Driven Unidirectional\nMagnetoresistance in CoFeB/InSb/CdTe Heterostructures

Magnetoresistance effects are crucial for understanding\nthe charge-spin\ntransport as well as propelling the advancement of spintronic applications.\nHere, we report the coexistence of magnetic-moment-dependent (MD)\nand magnetic-field-driven (FD) unidirectional magnetoresistance (UMR)\neffects in CoFeB/InSb/CdTe heterostructures. The strong spin–orbital\ncoupling of InSb and the matched impedance at the CoFeB/InSb interface\nwarrant a distinct MD-UMR effect at room temperature, while the interaction\nbetween the in-plane magnetic field and the Rashba effect at the InSb/CdTe\ninterface induces the marked FD-UMR signal that dominates the high-field\nregion. Moreover, owning to different spin scattering mechanisms,\nthese two types of non-reciprocal charge transports show opposite\npolarities with respect to the magnetic field direction, which further\nenables an effective phase modulation of the angular-dependent magnetoresistance.\nThe demonstration of the tunable UMR response validates our CoFeB/InSb/CdTe\nsystem as a suitable integrated building block for multifunctional\nspintronic memory and sensor designs.

Publication Details

Journal
Figshare
Published
2024-08-20
DOI
https://doi.org/10.1021/acsami.4c08159.s001
Primary Topic
Topological Materials and Phenomena
Type
article
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article

Observation of Moment-Dependent\nand Field-Driven Unidirectional\nMagnetoresistance in CoFeB/InSb/CdTe Heterostructures

Figshare
Topological Materials and Phenomena
article

Observation of Moment-Dependent\nand Field-Driven Unidirectional\nMagnetoresistance in CoFeB/InSb/CdTe Heterostructures

article en

Abstract

Magnetoresistance effects are crucial for understanding\nthe charge-spin\ntransport as well as propelling the advancement of spintronic applications.\nHere, we report the coexistence of magnetic-moment-dependent (MD)\nand magnetic-field-driven (FD) unidirectional magnetoresistance (UMR)\neffects in CoFeB/InSb/CdTe heterostructures. The strong spin–orbital\ncoupling of InSb and the matched impedance at the CoFeB/InSb interface\nwarrant a distinct MD-UMR effect at room temperature, while the interaction\nbetween the in-plane magnetic field and the Rashba effect at the InSb/CdTe\ninterface induces the marked FD-UMR signal that dominates the high-field\nregion. Moreover, owning to different spin scattering mechanisms,\nthese two types of non-reciprocal charge transports show opposite\npolarities with respect to the magnetic field direction, which further\nenables an effective phase modulation of the angular-dependent magnetoresistance.\nThe demonstration of the tunable UMR response validates our CoFeB/InSb/CdTe\nsystem as a suitable integrated building block for multifunctional\nspintronic memory and sensor designs.

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Topological Materials and Phenomena
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