Flexible\np‑Type\nWSe<sub>2</sub> Transistors\nwith Alumina Top-Gate Dielectric

Tungsten diselenide\n(WSe<sub>2</sub>) field-effect transistors\n(FETs) are promising for emerging electronics because of their tunable\npolarity, enabling complementary transistor technology, and their\nsuitability for flexible electronics through material transfer. In\nthis work, we demonstrate flexible p-type WSe<sub>2</sub> FETs with\nabsolute drain currents |<i>I</i><sub>D</sub>| up to 7 μA/μm.\nWe achieve this by fabricating flexible top-gated FETs with a combined\nWSe<sub>2</sub> and metal contact transfer approach using WSe<sub>2</sub> grown by metal–organic chemical vapor deposition on\nsapphire. Despite moderate WSe<sub>2</sub> crystal grain size, our\ndevices show similar or higher |<i>I</i><sub>D</sub>| and <i>I</i><sub>D</sub> on/off ratio (∼10<sup>5</sup>) compared\nto most devices with exfoliated single-crystal WSe<sub>2</sub> from\nthe literature. We analyze charge trapping in our devices using pulsed\nand bias stress measurements. Notably, the high |<i>I</i><sub>D</sub>| values are preserved during pulsing, where charge trapping\nis minimized. Overall, we demonstrate a fabrication approach advantageous\nfor high drain currents in flexible 2D transistors.