ATLAS-MAP:\nAn Automated Test Station for Gated Electronic\nTransport Measurements

The diversification of electronic materials in devices\nprovides\na strong incentive for methods to rapidly correlate device performance\nwith fabrication decisions. In this work, we present a low-cost automated\ntest station for gated electronic transport measurements of field-effect\ntransistors. Utilizing open-source PyMeasure libraries for transparent\ninstrument control, the “ATLAS-MAP” system serves as\na customizable interface between sourcemeters and samples under test\nand is programmed to conduct transfer curve and van der Pauw methods\nwith static and sweeping gate voltages. Zinc oxide transistors of\nvariable thickness (5, 10, and 20 nm) and channel size (50 μm\nto 3 mm, of equal length and width) were fabricated to validate the\ndesign. Standardization of testing procedures and raw data formatting\nenabled automated data analysis. A detailed list of parts and code\nfiles for the system are provided.

Publication Details

Journal
Figshare
Published
2024-09-27
DOI
https://doi.org/10.1021/acsmeasuresciau.4c00034.s001
Primary Topic
Advancements in Semiconductor Devices and Circuit Design
Type
article
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article

ATLAS-MAP:\nAn Automated Test Station for Gated Electronic\nTransport Measurements

Figshare
Advancements in Semiconductor Devices and Circuit Design
article

ATLAS-MAP:\nAn Automated Test Station for Gated Electronic\nTransport Measurements

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Abstract

The diversification of electronic materials in devices\nprovides\na strong incentive for methods to rapidly correlate device performance\nwith fabrication decisions. In this work, we present a low-cost automated\ntest station for gated electronic transport measurements of field-effect\ntransistors. Utilizing open-source PyMeasure libraries for transparent\ninstrument control, the “ATLAS-MAP” system serves as\na customizable interface between sourcemeters and samples under test\nand is programmed to conduct transfer curve and van der Pauw methods\nwith static and sweeping gate voltages. Zinc oxide transistors of\nvariable thickness (5, 10, and 20 nm) and channel size (50 μm\nto 3 mm, of equal length and width) were fabricated to validate the\ndesign. Standardization of testing procedures and raw data formatting\nenabled automated data analysis. A detailed list of parts and code\nfiles for the system are provided.

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Advancements in Semiconductor Devices and Circuit Design
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ATLAS-MAP:\nAn Automated Test Station for Gated Electronic\nTransport Measurements · Figshare (2024) | TGRS Research Map | TGRS