Synthesis and Characterization\nof Optically Transparent\nand Electrically Conductive Mo-Doped ZnO, F‑Doped ZnO, and\nMo/F-Codoped ZnO Thin Films via Aerosol-Assisted Chemical Vapor Deposition

Mo-doped ZnO (MZO), F-doped ZnO (FZO), and Mo/F-codoped\nZnO (MFZO)\nfilms have been deposited using a simple, cheap, and effective thin-film\npreparation route, aerosol-assisted chemical vapor deposition (AACVD).\nZnO was successfully doped with Mo and/or F, confirmed by X-ray photoelectron\nspectroscopy (XPS) and by a decrease in unit cell parameters from\nX-ray diffraction (XRD). XRD also confirmed that all of the films\nhad hexagonal wurtzite ZnO structures. Scanning electron microscopy\nshowed that all of the films had well-defined surface features. The\nundoped ZnO film had a high resistivity of ∼10<sup>2</sup> Ω·cm,\ndetermined by Hall effect measurements, and a visible light transmittance\nof 72%, determined by ultraviolet–visible (UV–vis)-IR\nspectroscopy. The transmittance of the doped and codoped films was\nimproved to 75–85%. The ZnO film codoped with 6.2 atom% Mo\nand 3.6 atom% F, deposited at 550 °C achieved the minimum resistance\n(5.084 × 10<sup>–3</sup> Ω·cm) with a significant\nimprovement in carrier concentration (5.483 × 10<sup>19</sup> cm<sup>–3</sup>) and mobility (21.78 cm<sup>2</sup> V<sup>–1</sup> s<sup>–1</sup>).