Control of SAG-GaN\nat the Nanoscale

Selective area growth (SAG) of GaN nanowires was performed\non GaN\non c-plane sapphire templates masked with SiN using hydride vapor\nphase epitaxy (HVPE). GaN nanowires exhibited various morphologies,\ndiscussed as a function of the pattern design, the partial pressure\nof the Ga gaseous precursor, the composition of the carrier gas, and\nthe growth temperature. The morphologies are elucidated by involving\na comparative study of growth rates of facets relative to each other.\nCL measurements showed high emission quality for GaN nanowires grown\nat 930 °C. This work places HVPE as an effective epitaxial technique\nfor growing III–N nanostructure-based devices at a low cost.