Three-Dimensional\nSemiconductor Network as Regulators\nof Energy Metabolism Drives Angiogenesis in Bone Regeneration

Insufficient vascularization is a primary cause of bone\nimplantation\nfailure. The management of energy metabolism is crucial for the achievement\nof vascularized osseointegration. In light of the bone semiconductor\nproperty and the electric property of semiconductor heterojunctions,\na three-dimensional semiconductor heterojunction network (3D-NTBH)\nimplant has been devised with the objective of regulating cellular\nenergy metabolism, thereby driving angiogenesis for bone regeneration.\nThe three-dimensional heterojunction interfaces facilitate electron\ntransfer and establish internal electric fields at the nanoscale interfaces.\nThe 3D-NTBH was found to noticeably accelerate glycolysis in endothelial\ncells, thereby rapidly providing energy to support cellular metabolic\nactivities and ultimately driving angiogenesis within the bone tissue.\nMolecular dynamic simulations have demonstrated that the 3D-NTBH facilitates\nthe exposure of fibronectin’s Arg-Gly-Asp peptide binding site,\nthereby regulating the glycolysis of endothelial cells. Further evidence\nsuggests that 3D-NTBH promotes early vascular network reconstruction\nand bone regeneration in vivo. The findings of this research offer\na promising research perspective for the design of vascularizing implants.