GaN Surface\nPassivation by MoS<sub>2</sub> Coating

In this study, we investigate the impact of two-dimensional\nMoS<sub>2</sub> coating on the optical properties of surface GaN/AlGaN\nquantum\nwells (QWs). A strong enhancement in GaN QW light emission is observed\nwith monolayer-MoS<sub>2</sub> coating, yielding luminescence intensity\ncomparable to that from a QW capped by an AlGaN barrier. Our results\ndemonstrate that MoS<sub>2</sub>, despite its quite different nature\nfrom III-nitride semiconductors, acts as an effective barrier for\nsurface GaN QWs and suppresses spatially localized intrinsic surface\nstates. This finding provides novel pathways for efficient III-nitride\nsurface passivation.