Gatemon Qubit\non a Germanium Quantum-Well Heterostructure

Gatemons are superconducting qubits resembling transmons,\nwith\na gate-tunable semiconducting weak link as the Josephson element.\nHere, we report a gatemon device featuring an aluminum microwave circuit\non a Ge/SiGe heterostructure embedding a Ge quantum well. Owing to\nthe superconducting proximity effect, the high-mobility two-dimensional\nhole gas confined in this well provides a gate-tunable superconducting\nweak link between two Al contacts. We perform Rabi oscillation and\nRamsey interference measurements, demonstrate the gate-voltage dependence\nof the qubit frequency, and measure the qubit anharmonicity. We find\nrelaxation times <i>T</i><sub>1</sub> up to 119 ns, and\nRamsey coherence times <i>T</i><sub>2</sub><sup>*</sup> up to 70 ns, and a qubit frequency gate-tunable\nover 3.5 GHz. The reported proof-of-concept reproduces the results\nof a very recent work [Sagi et al. Nat. Commun. 2024, 15, 6400] using similar Ge/SiGe heterostructures,\nthereby validating a novel platform for the development of gatemons\nand parity-protected cos(2ϕ) qubits.

Publication Details

Journal
Figshare
Published
2024-12-17
DOI
https://doi.org/10.1021/acs.nanolett.4c05539.s002
Primary Topic
Public Administration and Political Analysis
Type
article
Field-Weighted Citation Impact
0.00
Controls
|||
ALL TIME
JAN
FEB
MAR
APR
MAY
JUN
JUL
AUG
SEP
OCT
article

Gatemon Qubit\non a Germanium Quantum-Well Heterostructure

Figshare
Public Administration and Political Analysis
article

Gatemon Qubit\non a Germanium Quantum-Well Heterostructure

article en

Abstract

Gatemons are superconducting qubits resembling transmons,\nwith\na gate-tunable semiconducting weak link as the Josephson element.\nHere, we report a gatemon device featuring an aluminum microwave circuit\non a Ge/SiGe heterostructure embedding a Ge quantum well. Owing to\nthe superconducting proximity effect, the high-mobility two-dimensional\nhole gas confined in this well provides a gate-tunable superconducting\nweak link between two Al contacts. We perform Rabi oscillation and\nRamsey interference measurements, demonstrate the gate-voltage dependence\nof the qubit frequency, and measure the qubit anharmonicity. We find\nrelaxation times <i>T</i><sub>1</sub> up to 119 ns, and\nRamsey coherence times <i>T</i><sub>2</sub><sup>*</sup> up to 70 ns, and a qubit frequency gate-tunable\nover 3.5 GHz. The reported proof-of-concept reproduces the results\nof a very recent work [Sagi et al. Nat. Commun. 2024, 15, 6400] using similar Ge/SiGe heterostructures,\nthereby validating a novel platform for the development of gatemons\nand parity-protected cos(2ϕ) qubits.

Figshare
Openalex Percentile: Top 39%
Public Administration and Political Analysis
AI Navigator

Ask Laika to Summarize, Analyze, and Connect papers live on the map.

Summarize Papers & Methodologies

Extract key findings, datasets, and comparative methods across publications.

Benchmark Rankings & Visual Analytics

Rank top research institutions, authors, funders, topics, and journals by Field-Weighted Citation Impact (FWCI) and paper volume with instant charts.

Connect Distant Disciplines

Bridge topological clusters on the map to find hidden collaborative intersections.