Supplement 1 for the n-TLSext paper

The SM provides more details about the HB master equation (Eq. 1), photomemory matrices (i.e. the origin product and educt -matrices), the relationship between tunnel parameter () and double-well potential of TLSext, and numerical fitting methods used in our modeling studies. We also briefly discuss application of our model to fit temperature dependent HB data.

Publication Details

Journal
AIP Publishing
Published
2024-10-24
DOI
https://doi.org/10.60893/figshare.jcp.27122427
Primary Topic
Advancements in Semiconductor Devices and Circuit Design
Type
article
Field-Weighted Citation Impact
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article

Supplement 1 for the n-TLSext paper

AIP Publishing
Advancements in Semiconductor Devices and Circuit Design
article

Supplement 1 for the n-TLSext paper

article en

Abstract

The SM provides more details about the HB master equation (Eq. 1), photomemory matrices (i.e. the origin product and educt -matrices), the relationship between tunnel parameter () and double-well potential of TLSext, and numerical fitting methods used in our modeling studies. We also briefly discuss application of our model to fit temperature dependent HB data.

AIP Publishing
Openalex Percentile: Top 67%
Advancements in Semiconductor Devices and Circuit Design
DOIOpen Access PDFOpenAlex
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Supplement 1 for the n-TLSext paper · AIP Publishing (2024) | TGRS Research Map | TGRS