Characterization and modelling of low-frequency noise in polysilicon thin-film source-gated transistors from subthreshold to saturation

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Publication Details

Journal
Zenodo (CERN European Organization for Nuclear Research)
Published
2024-12-11
DOI
https://doi.org/10.5281/zenodo.14624308
Primary Topic
Advancements in Semiconductor Devices and Circuit Design
Type
article
Field-Weighted Citation Impact
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article

Characterization and modelling of low-frequency noise in polysilicon thin-film source-gated transistors from subthreshold to saturation

Zenodo (CERN European Organization for Nuclear Research)
Advancements in Semiconductor Devices and Circuit Design
article

Characterization and modelling of low-frequency noise in polysilicon thin-film source-gated transistors from subthreshold to saturation

article en

Abstract

No abstract available for this paper.
Zenodo (CERN European Organization for Nuclear Research)
University of Surrey (GB), UCLouvain (BE)
Affordable and clean energy
Openalex Percentile: Top 68%
Advancements in Semiconductor Devices and Circuit Design
DOIOpen Access PDFOpenAlex
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Characterization and modelling of low-frequency noise in polysilicon thin-film source-gated transistors from subthreshold to saturation · Zenodo (CERN European Organization for Nuclear Research) (2024) | TGRS Research Map | TGRS