Gate-Defined Single-Electron Transistors in Twisted Bilayer Graphene

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Publication Details

Journal
Zenodo (CERN European Organization for Nuclear Research)
Published
2024-09-12
DOI
https://doi.org/10.5281/zenodo.13737630
Primary Topic
Graphene research and applications
Type
article
Field-Weighted Citation Impact
0.00
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article

Gate-Defined Single-Electron Transistors in Twisted Bilayer Graphene

Zenodo (CERN European Organization for Nuclear Research)
Graphene research and applications
article

Gate-Defined Single-Electron Transistors in Twisted Bilayer Graphene

article en

Abstract

No abstract available for this paper.
Zenodo (CERN European Organization for Nuclear Research)
RWTH Aachen University (DE)
Openalex Percentile: Top 77%
Graphene research and applications
DOIOpen Access PDFOpenAlex
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Gate-Defined Single-Electron Transistors in Twisted Bilayer Graphene · Zenodo (CERN European Organization for Nuclear Research) (2024) | TGRS Research Map | TGRS