ON THE PROCESS OF CHARGE CARRIER DRIFT ON RECOMBINATION CENTERS IN SEMICONDUCTORS

The paper discusses the process of charge carrier drift on recombination centers in semiconductors. The process consists in the fact that the interaction with recombination centers of charge carriers does not disappear, but on the contrary they change their direction, and participate in conductivity. Such behavior of charge carriers by recombination centers or this process was called the "Bohr-Omon" effect.

Publication Details

Journal
Zenodo (CERN European Organization for Nuclear Research)
Published
2024-12-11
DOI
https://doi.org/10.5281/zenodo.14378634
Primary Topic
Advanced Materials and Semiconductor Technologies
Type
article
Field-Weighted Citation Impact
0.00
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article

ON THE PROCESS OF CHARGE CARRIER DRIFT ON RECOMBINATION CENTERS IN SEMICONDUCTORS

Zenodo (CERN European Organization for Nuclear Research)
Advanced Materials and Semiconductor Technologies
article

ON THE PROCESS OF CHARGE CARRIER DRIFT ON RECOMBINATION CENTERS IN SEMICONDUCTORS

article en

Abstract

The paper discusses the process of charge carrier drift on recombination centers in semiconductors. The process consists in the fact that the interaction with recombination centers of charge carriers does not disappear, but on the contrary they change their direction, and participate in conductivity. Such behavior of charge carriers by recombination centers or this process was called the "Bohr-Omon" effect.

Zenodo (CERN European Organization for Nuclear Research)
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Advanced Materials and Semiconductor Technologies
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ON THE PROCESS OF CHARGE CARRIER DRIFT ON RECOMBINATION CENTERS IN SEMICONDUCTORS · Zenodo (CERN European Organization for Nuclear Research) (2024) | TGRS Research Map | TGRS