Voltage generation for Sawyer-Tower Coss loss measurement based on resonant converters

Output capacitance losses in modern semiconductor devices become increasingly relevant with fast switching power converters. A new voltage generation approach is proposed to handle the highly variable capacitive load in a SawyerTower circuit. An LLC resonant converter is applied to generate the high voltage, high frequency sinusoidal excitation voltage, overcoming limitations of HF amplifiers. An external DC voltage source is introduced to prevent reverse conduction of the device under test, ensuring accurate charge-voltage (Q-V) characterization. Measurements under this voltage excitation are presented. The calculated dissipated energy is verified by thermal measurements observing the temperature rise of the DUT, showing less than 6 % deviation. This article presents a scalable and practical setup for power semiconductor characterization at high voltages.

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Publication Details

Journal
SPIRE - Sciences Po Institutional REpository
Published
2025-05-23
DOI
https://doi.org/10.34746/epe2025-0299
Primary Topic
Advanced DC-DC Converters
Type
article
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article

Voltage generation for Sawyer-Tower Coss loss measurement based on resonant converters

SPIRE - Sciences Po Institutional REpository
Advanced DC-DC Converters
article

Voltage generation for Sawyer-Tower Coss loss measurement based on resonant converters

article en

Abstract

Output capacitance losses in modern semiconductor devices become increasingly relevant with fast switching power converters. A new voltage generation approach is proposed to handle the highly variable capacitive load in a SawyerTower circuit. An LLC resonant converter is applied to generate the high voltage, high frequency sinusoidal excitation voltage, overcoming limitations of HF amplifiers. An external DC voltage source is introduced to prevent reverse conduction of the device under test, ensuring accurate charge-voltage (Q-V) characterization. Measurements under this voltage excitation are presented. The calculated dissipated energy is verified by thermal measurements observing the temperature rise of the DUT, showing less than 6 % deviation. This article presents a scalable and practical setup for power semiconductor characterization at high voltages.

SPIRE - Sciences Po Institutional REpository
Leipzig University of Applied Sciences (DE)
Affordable and clean energy
Openalex Percentile: Top 56%
Advanced DC-DC Converters
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