Tri-layer SiN-on-Si 8×8 Optical Switches with Thermo-optic and Electro-optic Actuators

We present two spatial-multiplexed switch-and-select (S&S) 8×8 optical switches incorporating a tri-layer SiN-on-Si platform, one equipped with thermo-optic (T-O) and the other electro-optic (E-O) switching elements. To the best of our knowledge, the electro-optic switch fabric is the first-of-its-kind device assembled in such a multi-layer platform. The shuffle between the multiplexer and demultiplexer array is established via a tri-layer Si-SiN-SiN structure, creating a three-dimensional crossing-free photonic shuffle network. At the same time, the implementation of the S&S topology can effectively suppress the first-order crosstalk. The measured on-chip losses for the T-O switch range from 2.1 to 11.5 dB, with a 5.2 dB average, while the E-O device exhibits losses between 8.7 to 19.6 dB, with a 15.1 dB average. Both switches demonstrate ultra-low crosstalk, with measured ranges of 38.9 to 50.8 dB and 42.8 to 51.9 dB, for the T-O and E-O devices respectively. The switching times are 17.6 μs for the T-O switch and 5.9 ns with the E-O actuated one. These performance metrics highlight the potential of these switches for next-generation data center applications.

Publication Details

Journal
Apollo (University of Cambridge)
Published
2025-03-25
DOI
https://doi.org/10.17863/cam.116860
Primary Topic
Neuroscience of respiration and sleep
Type
article
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article

Tri-layer SiN-on-Si 8×8 Optical Switches with Thermo-optic and Electro-optic Actuators

Apollo (University of Cambridge)
Neuroscience of respiration and sleep
article

Tri-layer SiN-on-Si 8×8 Optical Switches with Thermo-optic and Electro-optic Actuators

article en

Abstract

We present two spatial-multiplexed switch-and-select (S&S) 8×8 optical switches incorporating a tri-layer SiN-on-Si platform, one equipped with thermo-optic (T-O) and the other electro-optic (E-O) switching elements. To the best of our knowledge, the electro-optic switch fabric is the first-of-its-kind device assembled in such a multi-layer platform. The shuffle between the multiplexer and demultiplexer array is established via a tri-layer Si-SiN-SiN structure, creating a three-dimensional crossing-free photonic shuffle network. At the same time, the implementation of the S&S topology can effectively suppress the first-order crosstalk. The measured on-chip losses for the T-O switch range from 2.1 to 11.5 dB, with a 5.2 dB average, while the E-O device exhibits losses between 8.7 to 19.6 dB, with a 15.1 dB average. Both switches demonstrate ultra-low crosstalk, with measured ranges of 38.9 to 50.8 dB and 42.8 to 51.9 dB, for the T-O and E-O devices respectively. The switching times are 17.6 μs for the T-O switch and 5.9 ns with the E-O actuated one. These performance metrics highlight the potential of these switches for next-generation data center applications.

Apollo (University of Cambridge)
Openalex Percentile: Top 55%
Neuroscience of respiration and sleep
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Tri-layer SiN-on-Si 8×8 Optical Switches with Thermo-optic and Electro-optic Actuators · Apollo (University of Cambridge) (2025) | TGRS Research Map | TGRS