Structural and optical characterization of hole-doped Ge/SiGe multiple quantum wells for mid-infrared photonics
\nThe structural and optical properties of p-doped Ge quantum wells separated by SiGe barriers are presented. The composition profile was determined by atom probe tomography and X-ray diffraction measurements. The energy and broadening of the fundamental intersubband transition were studied by Fourier transform infrared spectroscopy which revealed a strong absorption peak around 8.5 μm making this or similar heterostructures suitable for the realization of optoelectronic devices working in the fingerprint region.\n
Publication Details
- Journal
- Springer Link (Chiba Institute of Technology)
- Published
- 2024-10-31
- DOI
- https://doi.org/10.1051/epjconf/202430901012/pdf
- Primary Topic
- Advanced Materials Characterization Techniques
- Type
- article
- Field-Weighted Citation Impact
- 0.00
Funders
- European Commission