Revealing Fast\nNegative Capacitance in PbZr<sub>0.2</sub>Ti<sub>0.8</sub>O<sub>3</sub> Thin Film with Acicular Ferroelastic\nDomains

Negative capacitance effects with fast response times\nhold great\npotential for reducing the power consumption in high-frequency nanoelectronics.\nNevertheless, the negative capacitance effect faces considerable complexity\narising from the dynamic interplay among electrostatic, nucleation\nenergies, and domain evolution. This intricate balance poses a formidable\nchallenge to achieving fast negative capacitance. Herein, we have\nachieved a fast negative capacitance time of ∼16.23 ns in PbZr<sub>0.2</sub>Ti<sub>0.8</sub>O<sub>3</sub> (PZT) thin film, and our investigation\nconfirms the presence of acicular ferroelastic domains within the\nPZT thin film. Under reversal electric fields, these acicular ferroelastic\ndomains undergo a unique flipping process, transitioning through domain\nexpansion and contraction. This distinct domain flipping manner accelerates\nthe nucleation and growth of ferroelectric domains, thereby facilitating\nthe observed fast negative capacitance. The realization of fast negative\ncapacitance holds substantial promise for reducing operational time\nand power consumption, offering prospects for the design of nanoelectronics\nwith significantly lower power requirements.