Selectively Suppressed\nDouble Channel Electronic Transport\nin the Sm Doping Semiconductor Layer Oxide Bi<sub>2</sub>O<sub>2</sub>Se

Great\nefforts recently have advanced the investigation of the high-mobility\ntwo-dimensional semiconductor Bi<sub>2</sub>O<sub>2</sub>Se toward\nits device applications, which arouses more questions to clarify the\nintriguing charge behaviors of Bi<sub>2</sub>O<sub>2</sub>Se. The\npresent work introduced Sm atoms to partially substitute the Bi atoms\nfor modulating the properties of the supposed conduction Bi<sub>2</sub>O<sub>2</sub> layer. A conduction behavior with double transport\nchannels was then discovered, one of which was significantly suppressed\nby the Sm doping, but another one was exempt. Such a selective suppression\nin channel mobility brought forward a transition from metallic-type\nconduction to semiconductor-type conduction, which simultaneously\ngave rise to an obvious weak localization and antilocalization effect\nin the samples. This study provides more experimental insights into\nthe interesting charge transport properties of Bi<sub>2</sub>O<sub>2</sub>Se and suggests a route to modify it.