Exploring the\nInfluence of Localized Surface Plasmon\nand Sol–Gel Passivation on Blue InGaN/GaN Micro/Nano Light\nEmitting Diodes

Micro light-emitting diodes (μLEDs)\nand nano LEDs (nLEDs)\nare attracting considerable interest as potential candidates for next-generation\ndisplays. However, both μLEDs and nLEDs encounter the major\nchallenge of decreasing the external quantum efficiency (EQE) as their\nsize diminishes. To address this issue, this study explores the effect\nof localized surface plasmon (LSP) and sol–gel passivation\non the performance of blue μLEDs and nLED arrays. The nLED arrays\nare composed of several nLEDs and are designed to have the same chip\narea as the μLEDs. The nLED arrays have a larger surface-to-volume\nratio compared to μLEDs, resulting in lower efficiency due to\neffects such as surface recombination. However, the nLED allows Ag/SiO<sub>2</sub> nanoparticles to be positioned in proximity to the sidewalls\nwhere the multi-quantum wells are exposed and has an advantage in\nmaximizing the LSP coupling effect and enhancing the impact of sol–gel\npassivation. As a result, when both effects are applied, the EQE values\nincreased from 3.47%–7.02% to 5.64%–8.08% for μLEDs\nand from 1.29%–5.22% to 4.90%–9.60% for nLEDs, as the\nsize increases from 10 to 50 μm. Specifically, the EQE enhancement\nresulting from the application of the LSP coupling effect in nLEDs\nranges from 50%–200%, which is significantly higher compared\nto μLEDs. The proposed approach provides insights into the influence\nof the LSP coupling effect combined with sol–gel passivation\non enhancing the efficiency of μLEDs and nLEDs for next-generation\ndisplays