Novel Two-Terminal\nSynapse/Neuron Based on an Antiferroelectric\nHafnium Zirconium Oxide Device for Neuromorphic Computing

Functionally diverse devices with artificial neuron and\nsynapse\nproperties are critical for neuromorphic systems. We present a two-terminal\nartificial leaky-integrate-fire (LIF) neuron based on 6 nm Hf<sub>0.1</sub>Zr<sub>0.9</sub>O<sub>2</sub> (HZO) antiferroelectric (AFE)\nthin films and develop a synaptic device through work function (WF)\nengineering. LIF neuron characteristics, including integration, firing,\nand leakage, are achieved in W/HZO/W devices due to the accumulated\npolarization and spontaneous depolarization of AFE HZO films. By engineering\nthe top electrode with asymmetric WFs, we found that Au/Ti/HZO/W devices\nexhibit synaptic weight plasticity, such as paired-pulse facilitation\nand long-term potentiation/depression, achieving >90% accuracy\nin\ndigit recognition within constructed artificial neural network systems.\nThese findings suggest that AFE HZO capacitor-based neurons and WF-engineered\nartificial synapses hold promise for constructing efficient spiking\nneuron networks and artificial neural networks, thereby advancing\nneuromorphic computing applications based on emerging AFE HZO devices.