Pushing the\nLimits of Photoconductivity via Hot Electrons\nin Deep Trap States in Plasmonic Architectures

Although extensive research on the mechanisms of photoconductivity\nenhancement in plasmonic Schottky structures has been conducted, the\nphotoconductive interplay between hot electrons and trapping states\nremains elusive. In this study, we explored the photoconductive relationship\nbetween plasmonic hot-carriers and defect sites present in plasmonic\narchitectures consisting of N-face n-GaN and Au nanoprisms. Our experimental\nresults clearly verified that the plasmonic hot-electrons generated\nby interband transitions preferentially occupied deep trap levels\nin n-GaN, thereby considerably enhancing the photoconductivity through\nthe combination of photogating and photovoltaic effects. Our quantitative\nevaluation demonstrated that a mere 63% increase in hot-electron trapping\nleads to a 1.7-fold increased photocurrent under localized surface\nplasmon resonance (LSPR) excitation compared to the figure of photocurrent\nunder non-LSPR stimulus. Our findings provide novel insights into\nthe mechanisms of photoconductive enhancement for advanced plasmonic\napplications.