On-Device Pressure-Tunable\nMoving Schottky Contacts

Contact engineering enhances electronic device performance\nand\nfunctions but often involves costly, inconvenient fabrication and\nmaterial replacement processes. We develop an <i>in situ</i>, reversible, full-device-scale approach to reconfigurable 2D van\nder Waals contacts. Ideal p-type Schottky contacts free from surface\ndangling bonds and Fermi-level pinning are constructed at structurally\nsuperlubric graphite-MoS<sub>2</sub> interfaces. Pressure control\nis introduced, beyond a threshold of which tunneling across the contact\ncan be activated and amplified at higher loads. Record-high figures\nof merits such an ideality factor nearing 1 and an off-state current\nof 10<sup>–11</sup> A were reported. The concept of on-device\nmoving contacts is demonstrated through a wearless Schottky generator,\noperating with an optimized overall efficiency of 50% in converting\nweak, random external stimuli into electricity. The device combines\ngenerator and pressure-sensor functions, achieving a high current\ndensity of 31 A/m<sup>2</sup> and withstanding over 120,000 cycles,\nmaking it ideal for neuromorphic computing and mechanosensing applications.

Publication Details

Journal
Figshare
Published
2024-09-19
DOI
https://doi.org/10.1021/acs.nanolett.4c03084.s001
Primary Topic
2D Materials and Applications
Type
article
Field-Weighted Citation Impact
0.00
Controls
|||
ALL TIME
JAN
FEB
MAR
APR
MAY
JUN
JUL
AUG
SEP
OCT
article

On-Device Pressure-Tunable\nMoving Schottky Contacts

Figshare
2D Materials and Applications
article

On-Device Pressure-Tunable\nMoving Schottky Contacts

article en

Abstract

Contact engineering enhances electronic device performance\nand\nfunctions but often involves costly, inconvenient fabrication and\nmaterial replacement processes. We develop an <i>in situ</i>, reversible, full-device-scale approach to reconfigurable 2D van\nder Waals contacts. Ideal p-type Schottky contacts free from surface\ndangling bonds and Fermi-level pinning are constructed at structurally\nsuperlubric graphite-MoS<sub>2</sub> interfaces. Pressure control\nis introduced, beyond a threshold of which tunneling across the contact\ncan be activated and amplified at higher loads. Record-high figures\nof merits such an ideality factor nearing 1 and an off-state current\nof 10<sup>–11</sup> A were reported. The concept of on-device\nmoving contacts is demonstrated through a wearless Schottky generator,\noperating with an optimized overall efficiency of 50% in converting\nweak, random external stimuli into electricity. The device combines\ngenerator and pressure-sensor functions, achieving a high current\ndensity of 31 A/m<sup>2</sup> and withstanding over 120,000 cycles,\nmaking it ideal for neuromorphic computing and mechanosensing applications.

Figshare
Affordable and clean energy
Openalex Percentile: Top 78%
2D Materials and Applications
AI Navigator

Ask Laika to Summarize, Analyze, and Connect papers live on the map.

Summarize Papers & Methodologies

Extract key findings, datasets, and comparative methods across publications.

Benchmark Rankings & Visual Analytics

Rank top research institutions, authors, funders, topics, and journals by Field-Weighted Citation Impact (FWCI) and paper volume with instant charts.

Connect Distant Disciplines

Bridge topological clusters on the map to find hidden collaborative intersections.