High-Performance\nUltraviolet to Near-Infrared Antiambipolar\nPhotodetectors Based on 1D CdS<sub><i>x</i></sub>Se<sub>1–<i>x</i></sub>/2D Te Heterojunction

Antiambipolar heterojunctions are regarded as a revolutionary\ntechnology\nin the fields of electronics and optoelectronics, enabling the switch\nbetween positive and negative transconductance within a single device,\nwhich is crucial for diverse logic circuit applications. This study\npioneers a mixed-dimensional photodetector featuring antiambipolar\nproperties, facilitated by the van der Waals integration of one-dimensional\nCdS<sub><i>x</i></sub>Se<sub>1–<i>x</i></sub> nanowires and two-dimensional Te nanosheets. This antiambipolar\ndevice enables flexible control over carrier transport via gate voltage,\nthus paving new paths for future optoelectronic devices. Furthermore,\nby precisely managing the stoichiometry of the ternary alloy CdS<sub><i>x</i></sub>Se<sub>1–<i>x</i></sub> nanowires,\nfine-tuning of the nanowire band structure is achieved. This allows\nfor customizable heterojunction band alignment (Type I and Type II),\nenabling adjustable band alignment. Through sophisticated band engineering,\noptimal Type II band alignment is achieved at the CdS<sub><i>x</i></sub>Se<sub>1–<i>x</i></sub>/Te interface,\nsignificantly enhancing the device’s photoelectric conversion\nefficiency through the synergistic effect of different dimensional\nmaterials. Exhibiting outstanding photoresponse across a broad spectral\nrange from ultraviolet to near-infrared, especially under 450 nm illumination,\nthe CdS<sub><i>x</i></sub>Se<sub>1–<i>x</i></sub>/Te heterojunction photodetector demonstrates superior performance,\nincluding an impressive responsivity of 284 A W<sup>–</sup><sup>1</sup>, a high detectivity of 1.07 × 10<sup>17</sup> Jones,\nan elevated external quantum efficiency of 7.83 × 10<sup>4</sup> %, and a swift response time of 11 μs. Ultimately, this customizable\nantiambipolar photodetector lays a solid foundation for the advancement\nof next-generation optoelectronic technologies.