Orbital Analysisof Electronic States for vdW MaterialCoPS<sub>3</sub> by Scanning Probe Microscopy

Two-dimensional planar antiferromagnets on the basis of transition metal phosphorus trichalcogenides (MPX<sub>3</sub>) have recently attracted much attention owing to the possibility of exfoliating these materials and potentially implementing them in spintronic heterostructures. For the purpose of designing particular interfaces with graphene or other two-dimensional materials, knowledge of the real-space atomic distributions in the MPX<sub>3</sub> layers is essential. Here, by using scanning probe microscopy in combination with <i>ab initio</i> calculations, we investigate the real-space structure of van der Waals material CoPS<sub>3</sub> down to the atomic level. We observe that the voltage dependence of scanning tunneling microscopy imaging shows distinct atomic signatures, which, upon comparison to the density functional theory results, can be directly attributed to different orbital contributions. The observed orbital fingerprints suggest the high spin ground state for Co<sup>2+</sup> ions (<i>S</i> = 3/2) and energy-dependent hybridization effects between atomic orbitals of Co, P, and S, thus providing valuable insight into the magnetic and electronic states of this van der Waals material.

Publication Details

Journal
Figshare
Published
2025-03-05
DOI
https://doi.org/10.1021/acs.jpcc.5c00330.s001
Primary Topic
2D Materials and Applications
Type
article
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Orbital Analysisof Electronic States for vdW MaterialCoPS3 by Scanning Probe Microscopy

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2D Materials and Applications
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Orbital Analysisof Electronic States for vdW MaterialCoPS3 by Scanning Probe Microscopy

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Abstract

Two-dimensional planar antiferromagnets on the basis of transition metal phosphorus trichalcogenides (MPX<sub>3</sub>) have recently attracted much attention owing to the possibility of exfoliating these materials and potentially implementing them in spintronic heterostructures. For the purpose of designing particular interfaces with graphene or other two-dimensional materials, knowledge of the real-space atomic distributions in the MPX<sub>3</sub> layers is essential. Here, by using scanning probe microscopy in combination with <i>ab initio</i> calculations, we investigate the real-space structure of van der Waals material CoPS<sub>3</sub> down to the atomic level. We observe that the voltage dependence of scanning tunneling microscopy imaging shows distinct atomic signatures, which, upon comparison to the density functional theory results, can be directly attributed to different orbital contributions. The observed orbital fingerprints suggest the high spin ground state for Co<sup>2+</sup> ions (<i>S</i> = 3/2) and energy-dependent hybridization effects between atomic orbitals of Co, P, and S, thus providing valuable insight into the magnetic and electronic states of this van der Waals material.

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Orbital Analysisof Electronic States for vdW MaterialCoPS<sub>3</sub> by Scanning Probe Microscopy · Figshare (2025) | TGRS Research Map | TGRS