Additional file 1 of Effect of La and Si additives in Zr-doped HfO2 capacitors for pseudo-linear high-κ dielectric applications

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Publication Details

Journal
Figshare
Published
2025-01-01
DOI
https://doi.org/10.6084/m9.figshare.28551806
Primary Topic
Ferroelectric and Negative Capacitance Devices
Type
article
Field-Weighted Citation Impact
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article

Additional file 1 of Effect of La and Si additives in Zr-doped HfO2 capacitors for pseudo-linear high-κ dielectric applications

Figshare
Ferroelectric and Negative Capacitance Devices
article

Additional file 1 of Effect of La and Si additives in Zr-doped HfO2 capacitors for pseudo-linear high-κ dielectric applications

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Abstract

No abstract available for this paper.
Figshare
SK Group (South Korea) (KR), The University of Texas at Dallas (US)
Affordable and clean energy
Openalex Percentile: Top 57%
Ferroelectric and Negative Capacitance Devices
DOIOpen Access PDFOpenAlex
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Additional file 1 of Effect of La and Si additives in Zr-doped HfO2 capacitors for pseudo-linear high-κ dielectric applications · Figshare (2025) | TGRS Research Map | TGRS