Karakterizacija detektora sa lavinskim efektom niskog pojačanja brzim jonskim snopovima

Semiconductor detectors are one of the most commonly used particle sensors that have found their mass application in almost all major experiments in high-energy physics. Modifications of the electrode geometry by adding a thin highly doped p+ layer and technological innovations of the standard silicon detectors led to the development of a new concept - Low Gain Avalanche Detectors (LGAD). The characteristics of LGAD detectors are still the subject of extensive research. A comprehensive study on the possibility of using up to now unused technique for characterization purposes is presented in this thesis. Techniques for silicon detector characterization have predominantly relied on the laser methods such as Transient Current Technique (TCT) and quite recently Two-Photon Absorbsion TCT. In this thesis, a great potential of the Ion Beam Induced Charge (IBIC) technique for future characterization of LGAD detectors is shown. 50 um active thickness (200 um total thickness) LGAD sensors with one electrode or four electrodes (arranged in 2x2 array configuration) with a nominal intrepad distance of 50 um were tested. The microprobe system at the Rudjer Boskovic Institute delivered different energies for the proton and carbon ion beams so that the 2D charge collection efficiency maps were obtained for shallow and deep probing. In the vicinity of the interpad region, the two different doses of irradiation were performed with the carbon ions so that a damage of 3.1e11 ions/cm2 and 6.3e11 ions/cm2 was introduced. As a consequence of the induced damage, the charge collection efficiency degradation was studied. The dependence of the interpad measurements on the penetration depths was demonstrated using proton beams with various energies. It was observed that the interpad distance increases with the penetration depth of ions. This result confirms the previously established hypotheses regarding the bending the electric field lines towards Junction Termination Extension (JTE). The dead layer thickness was determined by manipulating the angular distribution of the beam. The obtained results indicated the existence of the screening effect of the electric field and its dependence on the ionization density produced by the beam.