Supplementary document for Metal Organic Vapor Phase Epitaxy of High-Indium-Composition InGaN Quantum Dots towards Red Micro-LEDs - 5958861.pdf

Publication Details

Journal
Figshare
Published
2025-01-01
DOI
https://doi.org/10.6084/m9.figshare.20333820.v4
Primary Topic
GaN-based semiconductor devices and materials
Type
article
Field-Weighted Citation Impact
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article

Supplementary document for Metal Organic Vapor Phase Epitaxy of High-Indium-Composition InGaN Quantum Dots towards Red Micro-LEDs - 5958861.pdf

Figshare
GaN-based semiconductor devices and materials
article

Supplementary document for Metal Organic Vapor Phase Epitaxy of High-Indium-Composition InGaN Quantum Dots towards Red Micro-LEDs - 5958861.pdf

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Abstract

No abstract available for this paper.
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Openalex Percentile: Top 72%
GaN-based semiconductor devices and materials
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Supplementary document for Metal Organic Vapor Phase Epitaxy of High-Indium-Composition InGaN Quantum Dots towards Red Micro-LEDs - 5958861.pdf · Figshare (2025) | TGRS Research Map | TGRS