Supplementary document for High-quality GaSb epitaxially grown on Si (001) through defects self-annihilation for CMOS-compatible near-IR light emitters - 6172649.pdf

Details of the surface morphology of the GaSb epilayer based on AlSb nucleation layer with different V/III flux ratios and temperatures; GaSb epilayer grown at different temperatures; the surface morphology of the GaSb epilayer with different thickne

Publication Details

Journal: Figshare
Published: 2025-01-01
DOI: https://doi.org/10.6084/m9.figshare.21641411
Primary Topic: Semiconductor Quantum Structures and Devices
Type: article
Field-Weighted Citation Impact: 0.00

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Supplementary document for High-quality GaSb epitaxially grown on Si (001) through defects self-annihilation for CMOS-compatible near-IR light emitters - 6172649.pdf

Jan 1, 2025

Figshare

Semiconductor Quantum Structures and Devices

article

Supplementary document for High-quality GaSb epitaxially grown on Si (001) through defects self-annihilation for CMOS-compatible near-IR light emitters - 6172649.pdf

January 1, 2025article en

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Figshare

Openalex Percentile: Top 63%

Semiconductor Quantum Structures and Devices

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Supplementary document for High-quality GaSb epitaxially grown on Si (001) through defects self-annihilation for CMOS-compatible near-IR light emitters - 6172649.pdf · Figshare (2025) | TGRS Research Map | TGRS