SPIN GAPLESS SEMICONDUCTORS FOR SPINTRONIC APPLICATIONS

Spin gapless semiconductors (SGS) have emerged as a promising class of materials for advancing spintronic technologies due to their unique electronic and magnetic properties. Unlike conventional semiconductors, SGS materials exhibit a gapless band structure in one of the spin channels, offering high spin-polarized conduction with zero spin gap at the Fermi level. This distinctive feature makes SGS particularly attractive for spintronic applications such as spin field-effect transistors (Spin-FETs), magnetic memory devices, and quantum computing technologies. This review provides an in-depth examination of the properties of SGS, their potential in spintronic devices, and recent advances in material engineering. We discuss the latest experimental progress, challenges in synthesis and stability, and the integration of SGS into spintronic device architectures. Furthermore, we highlight the future prospects of SGS in revolutionizing next-generation low-power, high-efficiency spintronic applications. By reviewing the current state of SGS research, this article aims to underscore the pivotal role these materials could play in the development of future spintronic technologies.