IMPACT OF WAVELENGTH/INTENSITY AND VACUUM TEMPERATURE-DESORPTION ON DEFECTS OF LASER INDUCED GRAPHENE

Raman spectroscopy equipment and a cooling system are included for analyzing the LIG and managing the temperature during the process. The data acquisition system records the parameters and outcomes of the experiment. This equipment measures the Raman spectra to characterize the structural and electronic properties of the graphene. SEM is used to observe the surface topography, pore structure, and overall morphology of the LIG. It can reveal details such as the uniformity of the graphene layer, the presence of defects, and the formation of porous structures. The sample is coated with a thin conductive layer (if necessary) to prevent charging under the electron beam. The SEM captures images at various magnifications to provide a detailed view of the graphene structure. SIMS provides information about the elemental composition of the LIG, including the presence of contaminants or dopants. It is particularly useful for characterizing the chemical environment and understanding the incorporation of specific elements into the graphene structure. TEM is used to examine the internal structure of LIG, including the layer number, stacking order, and presence of defects or distortions in the graphene lattice. It provides insights into the crystallographic quality and defect density. The sample must be thin enough to allow electron transmission. TEM imaging can be combined with electron diffraction to assess the crystallinity and orientation of the graphene layers.