The Effect of two Injectors on SWIR Electron-injection Detector Optoelectrical Characteristics

In this paper, the structure of an electron-injection (EI) infrared detector with two electron injectors is presented, and the electrical and optical characteristics of the proposed device are compared with an EI detector with a single injector. The proposed detectors have an InP injector with a length of 550 nm and an InGaAs absorber with a length of 1 µm. The results indicate that the dark current of the two-injector EI detector is reduced by 61% compared to the single-injector EI detector at a voltage of -3 volt. Although the optical gain of the two-injector EI detector is lower than that of EI detectors with a single injector, its rise time at an optical power of 60 pW is four times faster, making these devices more suitable for high-speed applications.